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| DATA SHEET MOSFET WITH SCHOTTKY BARRIER DIODE PA2680T1E N-CHANNEL MOSFET WITH SCHOTTKY BARRIER DIODE FOR SWITCHING DESCRIPTION The PA2680T1E is a switching device, which can be driven directly by a 4.5 V power source. The PA2680T1E incorporates a MOSFET which features a low on-state resistance and excellent switching characteristics and a low forward voltage Schottky Barrier Diode, and is suitable for applications such as DC/DC converter of portable machine and so on. PIN CONNECTION (Top View) 6 5 4 FEATURES * 4.5 V drive available MOSFET * Low on-state resistance MOSFET RDS(on)1 = 38 m TYP. (VGS = 10 V, ID = 3.0 A) RDS(on)2 = 44 m TYP. (VGS = 4.5 V, ID = 3.0 A) * Low forward voltage Schottky Barrier Diode VF = 0.36 V TYP. (IF = 1.0 A) 1 2 3 1: Anode 2: Source/Cathode (Heat sink 2) 3: Gate 4: Drain (Heat sink 1) 5: Source/Cathode (Heat sink 2) 6: Anode ORDERING INFORMATION PART NUMBER PACKAGE 6LD3x3MLP PA2680T1E Marking: A2680 Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. Caution This product is electrostatic-sensitive device due to low ESD capability and should be handled with caution for electrostatic discharge. VESD = 150 V TYP. (C = 200 pF, R = 0 , Single Pulse) The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. G17661EJ2V0DS00 (2nd edition) Date Published May 2007 NS CP(K) Printed in Japan 2006 The mark PA2680T1E ABSOLUTE MAXIMUM RATINGS (TA = 25C, unless otherwise specified) MOSFET Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Note1 Drain Current (DC) Note2 Drain Current (pulse) Note1 Total Power Dissipation Channel Temperature Storage Temperature 2 VDSS VGSS ID(DC) ID(pulse) PT Tch Tstg 20 12 3.0 12.0 1.3 150 -55 to +150 V V A A W C C Notes 1. Mounted on a 1 in pad of 2 oz copper, 1.5" x 1.5" x 0.062" thick FR-4 board 2 2 (Cu pad: 322 mm x 70 m, FR-4: 1452 mm x 1.6 mmt) 2. PW 10 s, Duty Cycle 1% Schottky Barrier Diode Repetitive Peak Reverse Voltage Note Average Forward Current Note Total Power Dissipation Junction Temperature Storage Temperature VRRM IF PT TJ Tstg 20 1.8 1.2 125 -55 to +150 V A W C C Note Square wave, Duty Cycle = 50% 2 Mounted on a 1 in pad of 2 oz copper, 1.5" x 1.5" x 0.062" thick FR-4 board 2 2 (Cu pad: 322 mm x 70 m, FR-4: 1452 mm x 1.6 mmt) SBD side: 85C/W when mounted on a 1 in pad of 2 oz copper 2 FET side: 97C/W when mounted on a 1 in pad of 2 oz copper 2 2 Data Sheet G17661EJ2V0DS PA2680T1E ELECTRICAL CHARACTERISTICS (TA = 25C, unless otherwise specified) MOSFET CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate to Source Threshold Voltage Forward Transfer Admittance Note Note SYMBOL IDSS IGSS VGS(th) | yfs | RDS(on)1 RDS(on)2 TEST CONDITIONS VDS = 20 V, VGS = 0 V VGS = 12 V, VDS = 0 V VDS = VGS, ID = 0.25 mA VDS = 10 V, ID = 1.5 A VGS = 10 V, ID = 3.0 A VGS = 4.5 V, ID = 3.0 A VDS = 10 V, VGS = 0 V, f = 1.0 MHz VDD = 10 V, ID = 1.5 A, VGS = 4.5 V, RG = 10 MIN. TYP. MAX. 1 UNIT A A V S 10 0.6 1.0 3.6 38 44 190 90 33 9.0 7.0 16 4.0 50 60 2.0 Drain to Source On-state Resistance m m pF pF pF ns ns ns ns nC nC nC V Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Note Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) VDD = 16 V, VGS = 4.5 V, ID = 2.0 A IF = 3.0 A, VGS = 0 V 3.1 0.6 1.1 0.85 Note Pulsed: PW 350 s, Duty Cycle 2% TEST CIRCUIT 1 SWITCHING TIME TEST CIRCUIT 2 GATE CHARGE D.U.T. RL PG. RG VDD ID VGS 0 = 1 s Duty Cycle 1% ID Wave Form VGS VGS Wave Form 0 10% 90% VGS 90% D.U.T. IG = 2 mA 50 RL VDD 90% PG. ID 0 10% 10% td(on) ton tr td(off) toff tf Schottky Barrier Diode CHARACTERISTICS Forward Voltage Reverse Current Terminal Capacitance SYMBOL VF IR CT TEST CONDITIONS IF = 1.0 A VR = 5 V, TA = 100C f = 1.0 MHz, VR = 10 V 36 MIN. TYP. 0.36 MAX. 0.39 15 UNIT V mA pF Data Sheet G17661EJ2V0DS 3 PA2680T1E MOSFET TYPICAL CHARACTERISTICS (TA = 25C, unless otherwise specified) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 1.5 Mounted on FR-4 board of 1452 mm2 x 1.6 mmt 120 dT - Percentage of Rated Power - % 100 80 60 40 20 0 0 25 50 75 100 125 150 175 TA - Ambient Temperature - C PT - Total Power Dissipation - W 1.25 1 0.75 0.5 0.25 0 0 25 50 75 100 125 150 175 TA - Ambient Temperature - C FORWARD BIAS SAFE OPERATING AREA 100 d it e Lim V ) .5 =4 ID - Drain Current - A 10 R (o DS n) ID(pulse) PW =1 i (V GS ID(DC) m i s 1 10 ms 100 ms 0.1 Single Pulse Mounted on FR-4 board of 1452 mm2 x 1.6 mmt DC 0.01 0.1 1 10 100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(J-A) - Transient Thermal Resistance - C/W 1000 100 MOSFET SBD 10 1 Single Pulse 2 Mounted on FR-4 board of 1452 mm x 1.6 mmt Cu pad of 645 mm2 x 70 m (1 in2) 0.1 100 1m 10 m 100 m 1 PW - Pulse Width - s Data Sheet G17661EJ2V0DS 10 100 1000 4 PA2680T1E DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS 15 10 1 ID - Drain Current - A 10 ID - Drain Current - A VGS = 10 V 4.5 V 0.1 0.01 0.001 0.0001 TA = 125C 75C 25C -25C 2.5 V 5 Pulsed 0 0 0.2 0.4 0.6 0.8 VDS - Drain to Source Voltage - V VDS = 10 V Pulsed 0 0.5 1 1.5 2 2.5 VGS - Gate to Source Voltage - V GATE TO SOURCE THRESHOLD VOLTAGE vs. CHANNEL TEMPERATURE VGS(th) - Gate to Source Threshold Voltage - V GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE VGS(off) - Gate to Source Cut-off Voltage - V 1.5 1.3 1.1 0.9 0.7 0.5 -50 -25 0 25 50 75 100 125 150 VDS = 10 V ID = 1 mA 1.5 1.3 1.1 0.9 0.7 0.5 -50 -25 0 25 50 75 100 125 150 Tch - Channel Temperature - C VDS = VGS ID = 0.25 mA Tch - Channel Temperature - C FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT | yfs | - Forward Transfer Admittance - S DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT RDS(on) - Drain to Source On-state Resistance - m 10 TA = -25C 25C 75C 125C 1 100 80 VGS = 2.5 V 60 4.5 V 40 10 V 20 Pulsed 0 0.01 VDS = 10 V Pulsed 0.1 0.01 0.1 1 10 0.1 1 10 ID - Drain Current - A ID - Drain Current - A Data Sheet G17661EJ2V0DS 5 PA2680T1E DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE RDS(on) - Drain to Source On-state Resistance - m DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE RDS(on) - Drain to Source On-state Resistance - m 140 120 100 80 60 40 20 0 0 2 4 6 8 10 VGS - Gate to Source Voltage - V 100 80 60 40 20 0 1.5 A ID = 3.0 A Pulsed ID = 3.0 A Pulsed VGS = 4.5 V 10 V -50 -25 0 25 50 75 100 125 150 Tch - Channel Temperature - C CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE SWITCHING CHARACTERISTICS 1000 Ciss, Coss, Crss - Capacitance - pF td(on), tr, td(off), tf - Switching Time - ns VGS = 0 V f = 1.0 MHz 100 VDD = 10 V VGS = 4.5 V RG = 10 td(off) Ciss 100 Coss 10 td(on) tr tf Crss 10 0.01 1 0.1 1 10 100 0.1 1 ID - Drain Current - A 10 VDS - Drain to Source Voltage - V DYNAMIC INPUT CHARACTERISTICS SOURCE TO DRAIN DIODE FORWARD VOLTAGE 6 VGS - Gate to Source Voltage - V 10 ID = 2.0 A IF - Diode Forward Current - A VGS = 0 V Pulsed 1 4 VDD = 10 V 4V 16 V 2 0.1 0 0 0.5 1 1.5 2 2.5 3 QG - Gate Charge - nC 0.01 0.4 0.6 0.8 1 VF(S-D) - Source to Drain Voltage - V 6 Data Sheet G17661EJ2V0DS PA2680T1E SCHOTTKY BARRIER DIODE TYPICAL CHARACTERISTICS (TA = 25C, unless otherwise specified) FORWARD CURRENT vs. FORWARD VOLTAGE 100 REVERSE CURRENT vs. REVERSE VOLTAGE 10 IR - Reverse Current - mA TA = 125C IF - Forward Current - A 10 100C 75C 1 0.1 TA = 125C 75C 25C -25C 1 0.1 25C 0.01 0 0.2 0.4 0.6 0.8 1 VF - Forward Voltage - V 0.01 0 5 10 15 20 VR - Reverse Voltage - V TERMINAL CAPACITANCE vs. REVERSE VOLTAGE 1000 f = 1.0 MHz CT - Terminal Capacitance - pF 100 10 0.1 1 10 100 VR - Reverse Voltage - V Data Sheet G17661EJ2V0DS 7 PA2680T1E PACKAGE DRAWING (Unit: mm) 3 AB 0.2 RFE 3 0.02 -0.02 +0.03 2x 0.15 C 0.15 C 2 x C 0.9 0.1 0.08 C 0.1 C Heat sink 2 0.4 0.05 0.2 MIN. 0.1 1.1 0.05 0.95 6 1 0.4 0.95 5 0.75 2 PIN CONNECTION 1: Anode 2: Source/Cathode (Heat sink 2) 3: Gate 4: Drain (Heat sink 1) 5: Source/Cathode (Heat sink 2) 6: Anode 4 0.4 0.05 3 Heat sink 1 1.6 0.05 8 Data Sheet G17661EJ2V0DS 6x PA2680T1E * The information in this document is current as of May, 2007. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document. * NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC Electronics products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment and anti-failure features. * NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommended applications of an NEC Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of each NEC Electronics product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots. "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support). "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). M8E 02. 11-1 |
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